Pulse Electrodeposited AgGaSe2 Thin Films: Synthesis, Optical Properties, and Applications in Optoelectronic Devices

In this work, we have used pulse electro deposition technique for the synthesis of AgGaSe2 thin films. At room temperature, AgGaSe2 thin films were deposited using a bath containing Analar grade 10 mm silver nitrate, 10 mm gallium nitrate and 10 mm SeO2 onto Tin oxide coated glass substrates (5.0 ohms/sq). The potential for the deposition was maintained at -0.68 V (SCE). The varied Duty cycle was kept in the range of 6–50 %. Determination of the optical constants such as absorption coefficient, refractive index, extinction coefficient, optical conductivity and dielectric constant in the wavelength range from 500nm to 1400nm has been evaluated. Further, in terms of single oscillator model of free carrier absorption normal dispersion of the refractive index has been analyzed to estimate the dispersion and oscillation energy. The lattice dielectric constant, the ratio of free carrier concentration to free carrier effective mass and relaxation time have been determined.